onsemi NXH100B120H3Q0PG IGBT Module, 61 A 1200 V Case 180BF (Pb-Free and Halide-Free) Press-Fit Pins, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 186 W
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs
Onsemi NXH100B120H3Q0PG IGBT Module, 61 A 1200 V Case 180BF (Pb-Free And Halide-Free) Press-Fit Pins
Specifications of Onsemi NXH100B120H3Q0PG IGBT Module, 61 A 1200 V Case 180BF (Pb-Free And Halide-Free) Press-Fit Pins | |
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Instock | instock |