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Infineon Dual N-Channel MOSFET Module, 100 A, 1200 V AG-EASY1B FF11MR12W1M1B11BOMA1

About The 016 Ω, Maximum Gate Threshold Voltage: 20V.Infineon Dual N-Channel MOSFET Module, 100 A, 1200 V AG-EASY1B FF11MR12W1M1B11BOMA1, Series: CoolSiC, Mounting Type: Screw Mount, Maximum Drain Source Resistance: 0

Infineon Dual N-Channel MOSFET Module, 100 A, 1200 V AG-EASY1B FF11MR12W1M1B11BOMA1, Series: CoolSiC, Mounting Type: Screw Mount, Maximum Drain Source Resistance: 0.016 Ω, Maximum Gate Threshold Voltage: 20V

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Infineon Dual N-Channel MOSFET Module, 100 A, 1200 V AG-EASY1B FF11MR12W1M1B11BOMA1

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Infineon Dual N-Channel MOSFET Module, 100 A, 1200 V AG-EASY1B FF11MR12W1M1B11BOMA1

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Infineon Dual N-Channel MOSFET Module, 100 A, 1200 V AG-EASY1B FF11MR12W1M1B11BOMA1
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