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Vishay 600V 12A, Fast Recovery Epitaxial Diode Diode, 3-Pin DPAK VS-12EWH06FNTR-M3

About The 8V, Diode Technology: Silicon Junction, Peak Reverse Recovery Time: 22ns, Peak Non-Repetitive Forward Surge Current: 110A.Vishay 600V 12A, Fast Recovery Epitaxial Diode Diode, 3-Pin DPAK VS-12EWH06FNTR-M3, Mounting Type: Surface Mount, Package Type: DPAK (TO-252), Diode Configuration: Single, Rectifier Type: Soft Recovery, Maximum Forward Voltage Drop: 1

Vishay 600V 12A, Fast Recovery Epitaxial Diode Diode, 3-Pin DPAK VS-12EWH06FNTR-M3, Mounting Type: Surface Mount, Package Type: DPAK (TO-252), Diode Configuration: Single, Rectifier Type: Soft Recovery, Maximum Forward Voltage Drop: 1.8V, Diode Technology: Silicon Junction, Peak Reverse Recovery Time: 22ns, Peak Non-Repetitive Forward Surge Current: 110A

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > Schottky Diodes & Rectifiers

Vishay 600V 12A, Fast Recovery Epitaxial Diode Diode, 3-Pin DPAK VS-12EWH06FNTR-M3

More from Vishay 600V 12A, Fast Recovery Epitaxial Diode Diode, 3-Pin DPAK VS-12EWH06FNTR-M3, Mounting Type: Surface Mount, Package Type: DPAK (TO-252), Diode Configuration: Single, Rectifier Type: Soft Recovery, Maximum Forward Voltage Drop: 1.8V, Diode Technology: Silicon Junction, Peak Reverse Recovery Time: 22ns, Peak Non-Repetitive Forward Surge Current: 110A | Vishay
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Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > Schottky Diodes & Rectifiers

Specifications of Vishay 600V 12A, Fast Recovery Epitaxial Diode Diode, 3-Pin DPAK VS-12EWH06FNTR-M3

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Vishay 600V 12A, Fast Recovery Epitaxial Diode Diode, 3-Pin DPAK VS-12EWH06FNTR-M3
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