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Onsemi 2N6045G NPN Darlington Transistor, 8 A 100 V HFE:100, 3-Pin TO-220AB

About The 82mm.75 x 10

onsemi 2N6045G NPN Darlington Transistor, 8 A 100 V HFE:100, 3-Pin TO-220AB, Maximum Emitter Base Voltage: 5 V, Mounting Type: Through Hole, Transistor Configuration: Single, Maximum Base Emitter Saturation Voltage: 4.5 V, Maximum Collector Emitter Saturation Voltage: 2 V, Maximum Collector Cut-off Current: 20µA, Dimensions: 15.75 x 10.28 x 4.82mm

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > Darlington Pairs

Onsemi 2N6045G NPN Darlington Transistor, 8 A 100 V HFE:100, 3-Pin TO-220AB

More from Onsemi: Onsemi 2N6045G NPN Darlington Transistor, 8 A 100 V HFE:100, 3-Pin TO-220AB, Maximum Emitter Base Voltage: 5 V, Mounting Type: Through Hole, Transistor Configuration: Single, Maximum Base Emitter Saturation Voltage: 4.5 V, Maximum Collector Emitter Saturation Voltage: 2 V, Maximum Collector Cut-off Current: 20µA, Dimensions: 15.75 X 10.28 X 4.82mm
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Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > Darlington Pairs

Specifications of Onsemi 2N6045G NPN Darlington Transistor, 8 A 100 V HFE:100, 3-Pin TO-220AB

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Onsemi 2N6045G NPN Darlington Transistor, 8 A 100 V HFE:100, 3-Pin TO-220AB
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    • onsemi 2N6045G NPN Darlington Transistor, 8 A 100 V HFE:100, 3-Pin TO-220AB, Maximum Emitter Base Voltage: 5 V, Mounting Type: Through Hole, Transistor Configuration: Single, Maximum Base Emitter Saturation Voltage: 4.5 V, Maximum Collector Emitter Saturation Voltage: 2 V, Maximum Collector Cut-off Current: 20µA, Dimensions: 15.75 x 10.28 x 4.82mm
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    • onsemi 2N6045G NPN Darlington Transistor, 8 A 100 V HFE:100, 3-Pin TO-220AB, Maximum Emitter Base Voltage: 5 V, Mounting Type: Through Hole, Transistor Configuration: Single, Maximum Base Emitter Saturation Voltage: 4.5 V, Maximum Collector Emitter Saturation Voltage: 2 V, Maximum Collector Cut-off Current: 20µA, Dimensions: 15.75 x 10.28 x 4.82mm