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Taiwan Semiconductor Taiwan Semi 200V 6A, Silicon Junction Diode, 2-Pin R 6 6A20G R0

About The Taiwan Semiconductor Taiwan Semi 200V 6A, Silicon Junction Diode, 2-Pin R 6 6A20G R0, Mounting Type: Through Hole, Diode Configuration: Single, Maximum Forward Voltage Drop: 950mV, Number of Elements per Chip: 1, Diameter: 7.2mm, Peak Non-Repetitive Forward Surge Current: 250A

Taiwan Semiconductor Taiwan Semi 200V 6A, Silicon Junction Diode, 2-Pin R 6 6A20G R0, Mounting Type: Through Hole, Diode Configuration: Single, Maximum Forward Voltage Drop: 950mV, Number of Elements per Chip: 1, Diameter: 7.2mm, Peak Non-Repetitive Forward Surge Current: 250A

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > Schottky Diodes & Rectifiers

Taiwan Semiconductor Taiwan Semi 200V 6A, Silicon Junction Diode, 2-Pin R 6 6A20G R0

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > Schottky Diodes & Rectifiers

Specifications of Taiwan Semiconductor Taiwan Semi 200V 6A, Silicon Junction Diode, 2-Pin R 6 6A20G R0

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Taiwan Semiconductor Taiwan Semi 200V 6A, Silicon Junction Diode, 2-Pin R 6 6A20G R0
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