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Infineon FF450R12ME7B11BPSA1 Dual IGBT Module, 450 A 1200 V AG-ECONOD, Chassis Mount

About The Infineon FF450R12ME7B11BPSA1 Dual IGBT Module, 450 A 1200 V AG-ECONOD, Chassis Mount, Maximum Gate Emitter Voltage: 20V, Maximum Power Dissipation: 20 mW, Transistor Configuration: Series

Infineon FF450R12ME7B11BPSA1 Dual IGBT Module, 450 A 1200 V AG-ECONOD, Chassis Mount, Maximum Gate Emitter Voltage: 20V, Maximum Power Dissipation: 20 mW, Transistor Configuration: Series

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs

Infineon FF450R12ME7B11BPSA1 Dual IGBT Module, 450 A 1200 V AG-ECONOD, Chassis Mount

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs

Specifications of Infineon FF450R12ME7B11BPSA1 Dual IGBT Module, 450 A 1200 V AG-ECONOD, Chassis Mount

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Infineon FF450R12ME7B11BPSA1 Dual IGBT Module, 450 A 1200 V AG-ECONOD, Chassis Mount
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