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NSK-RHP MP1 1/2 Pillow Block Bearing -, 38.09mm ID

About The 5mm.2mm, Depth: 60mm, Overall Height: 116

NSK-RHP MP1 1/2 Pillow Block Bearing -, 38.09mm ID, Material: Cast Iron, Centre Height: 58.72mm, Mount Hole Size: 16mm, Length: 222.2mm, Depth: 60mm, Overall Height: 116.7mm, Mount Hole Centre-to-Centre: 172.5mm

Mechanical & Fluid Power & Tools > Bearings & Seals > Rotary Bearings & Housing Units > Plummer Blocks & Pillow Blocks

NSK-RHP MP1 1/2 Pillow Block Bearing -, 38.09mm ID

More from NSK-RHP, NSK-RHP MP1 1/2 Pillow Block Bearing -, 38.09mm ID, Material: Cast Iron, Centre Height: 58.72mm, Mount Hole Size: 16mm, Length: 222.2mm, Depth: 60mm, Overall Height: 116.7mm, Mount Hole Centre-to-Centre: 172.5mm
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Mechanical & Fluid Power & Tools > Bearings & Seals > Rotary Bearings & Housing Units > Plummer Blocks & Pillow Blocks

Specifications of NSK-RHP MP1 1/2 Pillow Block Bearing -, 38.09mm ID

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Instockinstock

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NSK-RHP MP1 1/2 Pillow Block Bearing -, 38.09mm ID
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    • NSK-RHP MP1 1/2 Pillow Block Bearing -, 38.09mm ID, Material: Cast Iron, Centre Height: 58.72mm, Mount Hole Size: 16mm, Length: 222.2mm, Depth: 60mm, Overall Height: 116.7mm, Mount Hole Centre-to-Centre: 172.5mm
    • IXYS N-Channel MOSFET, 120 A, 300 V, 3-Pin PLUS247 IXFX120N30P3, Series: HiperFET, Polar3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 27 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.13 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 16.13mm, Maximum Operating Temperature: +150 °C
    • NSK-RHP MP1 1/2 Pillow Block Bearing -, 38.09mm ID, Material: Cast Iron, Centre Height: 58.72mm, Mount Hole Size: 16mm, Length: 222.2mm, Depth: 60mm, Overall Height: 116.7mm, Mount Hole Centre-to-Centre: 172.5mm
    • IXYS N-Channel MOSFET, 120 A, 300 V, 3-Pin PLUS247 IXFX120N30P3, Series: HiperFET, Polar3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 27 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.13 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 16.13mm, Maximum Operating Temperature: +150 °C