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Vishay VSMY98545, Surflight 850nm High Power IR Emitting Diode, SMD Package

About The Vishay VSMY98545, Surflight 850nm High Power IR Emitting Diode, SMD package, Radiant Flux: 660mW, Radiant Intensity: 1600mW/sr, Mounting Type: Surface Mount, Angle of Half Intensity: ±45°, Number of Pins: 3, Dimensions: 3.85 x 2

Vishay VSMY98545, Surflight 850nm High Power IR Emitting Diode, SMD package, Radiant Flux: 660mW, Radiant Intensity: 1600mW/sr, Mounting Type: Surface Mount, Angle of Half Intensity: ±45°, Number of Pins: 3, Dimensions: 3.85 x 3.85 x 2.24mm, Lens Shape: Dome

Electronic Components & Power & Connectors > Displays & Optoelectronics > LEDs - Light Emitting Diodes > IR LEDs

Vishay VSMY98545, Surflight 850nm High Power IR Emitting Diode, SMD Package

More from Vishay? Vishay VSMY98545, Surflight 850nm High Power IR Emitting Diode, SMD Package, Radiant Flux: 660mW, Radiant Intensity: 1600mW/sr, Mounting Type: Surface Mount, Angle Of Half Intensity: ±45°, Number Of Pins: 3, Dimensions: 3.85 X 3.85 X 2.24mm, Lens Shape: Dome
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Electronic Components & Power & Connectors > Displays & Optoelectronics > LEDs - Light Emitting Diodes > IR LEDs

Specifications of Vishay VSMY98545, Surflight 850nm High Power IR Emitting Diode, SMD Package

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Vishay VSMY98545, Surflight 850nm High Power IR Emitting Diode, SMD Package
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    • Vishay N-Channel MOSFET, 50 A, 40 V, 3-Pin DPAK SUD50N04-8M8P-4GE3, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 10.5 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1.5V, Maximum Power Dissipation: 48.1 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 6.73mm, Maximum Operating Temperature: +150 °C
    • Vishay VSMY98545, Surflight 850nm High Power IR Emitting Diode, SMD package, Radiant Flux: 660mW, Radiant Intensity: 1600mW/sr, Mounting Type: Surface Mount, Angle of Half Intensity: ±45°, Number of Pins: 3, Dimensions: 3.85 x 3.85 x 2.24mm, Lens Shape: Dome
    • Vishay N-Channel MOSFET, 50 A, 40 V, 3-Pin DPAK SUD50N04-8M8P-4GE3, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 10.5 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1.5V, Maximum Power Dissipation: 48.1 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 6.73mm, Maximum Operating Temperature: +150 °C
    • Vishay VSMY98545, Surflight 850nm High Power IR Emitting Diode, SMD package, Radiant Flux: 660mW, Radiant Intensity: 1600mW/sr, Mounting Type: Surface Mount, Angle of Half Intensity: ±45°, Number of Pins: 3, Dimensions: 3.85 x 3.85 x 2.24mm, Lens Shape: Dome