Infineon IGP20N65H5XKSA1 Single IGBT, 42 A 650 V TO-220-3

Name: Infineon - Infineon IGP20N65H5XKSA1 Single IGBT, 42 A 650 V TO-220-3
Brand: Infineon
SKU: ABDZ-7838
Price: 16.15 EUR
Availability: InStock

About The Infineon IGP20N65H5XKSA1 Single IGBT, 42 A 650 V TO-220-3

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs

Infineon IGP20N65H5XKSA1 Single IGBT, 42 A 650 V TO-220-3

SICK Inductive Block Proximity Sensor, 4 mm Detection, PNP NC, 10 → 30 V dc, Connection Type: M8, IP Rating: IP67, IP68, Length: 8mm, Mounting Type: Non-Flush, Housing Material: Plastic, Maximum DC Voltage: 30V, Minimum Operating Temperature: -25°C, Depth: 40mm, MPN: 1055503

SICK Inductive Block Proximity Sensor, 20 mm Detection, NPN NO, 10 → 30 V dc, Connection Type: M12, IP Rating: IP67, IP68, IP69K, Length: 66mm, Mounting Type: Flush, Housing Material: Plastic, Width: 40mm, Maximum DC Voltage: 30V, Minimum Operating Temperature: -25°C, MPN: 1071846

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs

Specifications of Infineon IGP20N65H5XKSA1 Single IGBT, 42 A 650 V TO-220-3
Category
Instock	instock

Last Updated February 4th, 2025 12:05 am

Infineon IGP20N65H5XKSA1 Single IGBT, 42 A 650 V TO-220-3

More Varieties

Rating :- 8.09 /10

Votes :- 41

ROHM RGSX5TS65HRC11 Single IGBT, 75 A 650 V, 3-Pin TO-247N, Through Hole, Maximum Gate Emitter Voltage: ±30V, Maximum Power Dissipation: 404 W, Transistor Configuration: Common Emitter

ROHM RGSX5TS65HRC11 Single IGBT, 75 A 650 V, 3-Pin TO-247N, Through Hole.

ROHM RGSX5TS65DHRC11 Single IGBT, 75 A 650 V, 3-Pin TO-247N, Through Hole, Maximum Gate Emitter Voltage: ±30V, Maximum Power Dissipation: 404 W, Transistor Configuration: Common Emitter

ROHM RGSX5TS65DHRC11 Single IGBT, 75 A 650 V, 3-Pin TO-247N, Through Hole.

ROHM 100V 20A, Dual Schottky Rectifier & Schottky Diode, 3-Pin DPAK RBQ20BM100ATL

ROHM 100V 20A, Dual Schottky Rectifier & Schottky Diode, 3-Pin DPAK RBQ20BM100ATL.

ROHM 40V 1.5A, Schottky Rectifier & Schottky Diode, 2-Pin SMD1006 RB160QS-40T18R, Mounting Type: Surface Mount, Diode Configuration: Single, Diode Technology: Schottky Barrier

ROHM 40V 1.5A, Schottky Rectifier & Schottky Diode, 2-Pin SMD1006 RB160QS-40T18R.

ROHM 40V 1.5A, Schottky Rectifier & Schottky Diode, 2-Pin SMD1006 RB160QS-40T18R, Mounting Type: Surface Mount, Diode Configuration: Single, Diode Technology: Schottky Barrier

ROHM 40V 1.

Infineon IGP20N65H5XKSA1 Single IGBT, 42 A 650 V TO-220-3

About The Infineon IGP20N65H5XKSA1 Single IGBT, 42 A 650 V TO-220-3

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs

Specifications of Infineon IGP20N65H5XKSA1 Single IGBT, 42 A 650 V TO-220-3

ROHM RGSX5TS65HRC11 Single IGBT, 75 A 650 V, 3-Pin TO-247N, Through Hole, Maximum Gate Emitter Voltage: ±30V, Maximum Power Dissipation: 404 W, Transistor Configuration: Common Emitter

ROHM RGSX5TS65DHRC11 Single IGBT, 75 A 650 V, 3-Pin TO-247N, Through Hole, Maximum Gate Emitter Voltage: ±30V, Maximum Power Dissipation: 404 W, Transistor Configuration: Common Emitter

ROHM 100V 20A, Dual Schottky Rectifier & Schottky Diode, 3-Pin DPAK RBQ20BM100ATL

ROHM 40V 1.5A, Schottky Rectifier & Schottky Diode, 2-Pin SMD1006 RB160QS-40T18R, Mounting Type: Surface Mount, Diode Configuration: Single, Diode Technology: Schottky Barrier

ROHM 40V 1.5A, Schottky Rectifier & Schottky Diode, 2-Pin SMD1006 RB160QS-40T18R, Mounting Type: Surface Mount, Diode Configuration: Single, Diode Technology: Schottky Barrier