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Infineon FF75R12RT4HOSA1 Series IGBT Module, 75 A 1200 V, 7-Pin 34MM Module, Panel Mount

About The 2mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C.Infineon FF75R12RT4HOSA1 Series IGBT Module, 75 A 1200 V, 7-Pin 34MM Module, Panel Mount, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 395 W, Dimensions: 94 x 34 x 30

Infineon FF75R12RT4HOSA1 Series IGBT Module, 75 A 1200 V, 7-Pin 34MM Module, Panel Mount, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 395 W, Dimensions: 94 x 34 x 30.2mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs

Infineon FF75R12RT4HOSA1 Series IGBT Module, 75 A 1200 V, 7-Pin 34MM Module, Panel Mount

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs

Specifications of Infineon FF75R12RT4HOSA1 Series IGBT Module, 75 A 1200 V, 7-Pin 34MM Module, Panel Mount

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Infineon FF75R12RT4HOSA1 Series IGBT Module, 75 A 1200 V, 7-Pin 34MM Module, Panel Mount
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